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深圳n型碳化硅襯底_上海n型碳化硅_上海n型碳化硅襯底_豪麥瑞供

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    • 深圳n型碳化硅襯底_上海n型碳化硅_上海n型碳化硅襯底_豪麥瑞供_蘇州豪麥瑞材料科技有限公司專業(yè)從事氧化鋁球,氧化鋯球,陶瓷精加工,紡織陶瓷拋光加工業(yè)務(wù).聯(lián)系電話：18962527682 網(wǎng)址：www.homraymaterial.cn


      碳化硅半導(dǎo)體是新一代寬禁帶半導(dǎo)體，它具有熱導(dǎo)率高，與GaN晶格失配小等優(yōu)勢，非常適合用作發(fā)光二極管，大功率電力電子材料。

      采用碳化硅作襯底的LED器件亮度更高、能耗更低、壽命更長、單位芯片面積更小，且在大功率LED方面具有非常大的優(yōu)勢。此外，碳化硅除了用作LED襯底，它還可以制造高耐壓、大功率電力電子器件如肖特基二極管（SBD/JBS）、絕緣柵雙極型晶體管（IGBT）,晶閘管（GTO）、金屬氧化物半導(dǎo)體場效應(yīng)晶體管（MOSFET）等，用于智能電網(wǎng)、太陽能并網(wǎng)、電動汽車等行業(yè)。

      從整體上看，碳化硅半導(dǎo)體完整產(chǎn)業(yè)鏈包括：碳化硅原料-晶錠-襯底-外延-芯片-器件-模塊。

      我們公司進(jìn)口碳化硅晶圓，為我們的客戶提供所需的材料，讓客戶在這樣行業(yè)里促進(jìn)技術(shù)的快速擴(kuò)展。

       產(chǎn)品介紹：

      n-type SiC Substrate

       

      PRODUCT DESCRIPTIONS

       

      The Materials Business Unit produces a wide assortment of n-type conductive SiC products ranging in wafer diameters up to 150mm. This material is manufactured upon a high-volume platform process that provides our customers the highest degree of material quality, supply assurance and economies of scale.

      Part Number

      Description

      W4NRF0X-0200

       

      4H-SiC, n-type, Research Grade, 100mm, On-Axis, 0.013-2.0 ohm-cm, Standard MPD, 500um Thick, DoubleSided Polish Si Face CMP Epi Ready, Bare Substrate

      W4NRF4C-U200

       

      4H-SiC, n-type, Research Grade, 100mm, 4° Off-Axis, 0.015-0.028 ohm-cm, Ultra Low MPD ≤1/cm2, 350um Thick, Double-Sided Polish Si Face CMP Epi Ready, Bare Substrate

      W4NPF4C-U200

       

      4H-SiC, n-type, Production Grade, 100mm, 4° Off-Axis, 0.015-0.028 ohm-cm, Ultra Low MPD ≤1/cm2, 350um Thick, Double-Sided Polish Si Face CMP Epi Ready, Bare Substrate

      W4NRF4C-B200

      4H-SiC, n-type, Research Grade, 100mm, 4° Off-Axis, 0.015-0.028 ohm-cm, Ultra Low MPD ≤1/cm2, Low BPD ≤1500/cm2, 350um Thick, Double Sided Polish Si Face CMP Epi Ready, Bare Substrate

      W4NPF4C-B200

      4H-SiC, n-type, Production Grade, 100mm, 4° Off-Axis, 0.015-0.028 ohm-cm, Ultra Low MPD ≤1/cm2, Low BPD ≤1500/cm2, 350um Thick, Double-Sided Polish Si Face CMP Epi Ready, Bare Substrate

      W4NRG4C-C1-V200

      4H-SiC, n-type, Research Grade, 150mm, 4° Off-Axis, 0.015-0.028 ohm-cm, Very Low MPD ≤5/cm2, 350um Thick w/ 47.5mm Flat, Double-Sided Polish Si Face CMP Epi Ready, Bare Substrate

      W4NPG4C-C1-V200

      4H-SiC, n-type, Production Grade, 150mm, 4° Off-Axis, 0.015-0.028 ohm-cm, Very Low MPD ≤5/cm2, 350um Thick w/ 47.5mm Flat, Double-Sided Polish Si Face CMP Epi Ready, Bare Substrate

      W4NRG4C-C1-U200

      4H-SiC, n-type, Research Grade, 150mm, 4° Off-Axis, 0.015-0.028 ohm-cm, Ultra Low MPD ≤1/cm2, 350um Thick w/ 47.5mm Flat, Double-Sided Polish Si Face CMP Epi Ready, Bare Substrate

      W4NPG4C-C1-U200

      4H-SiC, n-type, Production Grade, 150mm, 4° Off-Axis, 0.015-0.028 ohm-cm, Ultra Low MPD ≤1/cm2, 350um Thick w/ 47.5mm Flat, Double-Sided Polish Si Face CMP Epi Ready, Bare Substrate

      *C-faced polished wafers and 150mm LBPD substrates available upon request, lead times dependent on volume and requirements

       

       

       

       

       

      FLAT LENGTH

      Linear dimension of the flat measured with ANSI-certified digital calipers on a sample of one wafer per ingot

       

       

       

       

       

       


       

       

                  


       


      PRIMARY FLAT

      The flat of the longest length on the wafer, oriented such that the chord is parallel with a specified low-index crystal plane.

      PRIMARY FLAT ORIENTATION

      The primary flat is the {1010} plane with the flat face parallel to the <1120> direction.  Measured with Laue back reflection technique.

      SECONDARY FLAT

      A flat of shorter length than the primary flat, whose position with respect to the primary flat identifies the face of the wafer. Not applicable to 150mm wafers.

      SECONDARY FLAT ORIENTATION

      The secondary flat is the {11-20} plane with the flat face parallel to the <1010> direction.  Measured with Laue back reflection technique.

                          


      橢圓: XXXXXX-XX     

       

       

       


       

       

       

                         

       

                                                                               

      MARKING

      For silicon-face polished material, the carbon face of each individual wafer is laser-marked with OCR-compatible font, similar to definitions and characteristics in SEMI M12. For carbonface-polished material, the silicon face of each individual wafer is laser-marked.

       

      PRODUCT SPECIFICATIONS

      100mm Diameter n-type Substrates

      Diameter

      100.0 mm +0.0/-0.5 mm

      Thickness

      On-axis

      500 μm ± 25 μm

      Off-axis

      350.0 μm ± 25.0 μm

      Dopant

      Nitrogen

      Primary flat length

      32.5 mm ± 2.0 mm

      Secondary flat length

      18.0 mm ± 2.0 mm

      Surface orientation

      On-axis

      {0001} ± 0.25?

      Off-axis

      4.0? toward <1120> ± 0.5?

      Surface finish

      Back face optical polish, epi-face CMP

      Orthogonal misorientation

      ± 5.0?

      Primary flat orientation

      <1120> ± 5.0?

      Secondary flat orientation

      90.0? CW from primary ± 5.0?, silicon face up

      TTV

      ≤15 microns, full substrate

      Warp

      ≤45 microns, full substrate

      LTV (average, 1 cm2 site)

      ≤4 microns, full substrate

      Edge chips by diffuse lighting

      Production-grade

      none permitted ≥0.5mm width and depth

      Research-grade

      qty. 2 ≥1.0 mm width and depth

       

      150mm Diameter n-type Substrates

      Diameter

      150.0 mm ± 0.25 mm

      Thickness

       

      C1 specification

      350 μm ± 25 μm

      Dopant

      Nitrogen

      Primary flat length

      47.5 mm ± 1.5 mm

      Secondary flat length

      None

      Surface orientation

      4.0? toward <11-20> ± 0.5?

      Surface finish

      Back face optical polish, epi-face CMP

      Orthogonal misorientation

      ± 5.0?

      Primary flat orientation

      <11-20> ± 5?

      Secondary flat orientation

      N/A

      TTV

      ≤10 μm

      Warp

      Production-grade

      ≤40 μm

      Research-grade

      ≤60 μm

      LTV (average, 1 cm2 site)

       

      Production-grade

      ≤2 μm

      Research-grade

      ≤4 μm

      Edge chips by diffuse lighting

      Production-grade

      none permitted ≥0.5mm width and depth

      Research-grade

      qty. 2 ≥1.0 mm width and depth

       


      4H-N碳化硅晶片.jpg6H-N碳化硅晶片&nbsp;.jpg6H-SI碳化硅晶片&nbsp;.jpg



      蘇州豪麥瑞材料科技有限公司簡介：

         蘇州豪麥瑞材料科技有限公司是一家專業(yè)從事氧化鋁、氧化鋯產(chǎn)品、開發(fā) 制造、銷售于一體的企業(yè)，企業(yè)有國內(nèi)前列的工藝，專業(yè)的技術(shù)人員，先進(jìn)的生產(chǎn)設(shè)備和檢測手段。我公司生產(chǎn)的產(chǎn)品主要有：工業(yè)用各類氧化鋁粉包括（藍(lán)寶石長晶用粉，拋光用粉，拋光液用氧化鋁粉，片狀氧化鋁粉……）,研磨用氧化鋁球，研磨用氧化鋯球，氧化鋁陶瓷件，精密氧化鋁陶瓷，專業(yè)陶瓷精加工服務(wù)，紡織陶瓷拋光精加工服務(wù)。
              我公司產(chǎn)品齊全，被大范圍用于研磨、半導(dǎo)體、化工、拋光、制造、紡織等行業(yè)。由于我們的產(chǎn)品性能優(yōu)良，久經(jīng)耐用，深受廣大用戶好評。我們將優(yōu)質(zhì)的產(chǎn)品與服務(wù)奉獻(xiàn)客戶， 盡我們比較大的努力達(dá)到客戶的滿意。我們希望建立長期的友好合作關(guān)系，歡迎廣大國內(nèi)外新老客戶來電咨詢及來廠考察洽談!

      蘇州豪麥瑞材料科技有限公司聯(lián)系方式：

      王經(jīng)理：18962527682

      孫經(jīng)理：18626214311            
      聯(lián)系電話：0512-65030678
      網(wǎng)址：www.homraymaterial.cn
      地址：蘇州市工業(yè)園區(qū)唯華路3號君地商務(wù)廣場5棟602室

       



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